Design Considerations and Performance Evaluation of 1200-V 100-A SiC MOSFET-Based Two-Level Voltage Source Converter

Performance Analysis of a 1200 V SiC MOSFET Based 10 kVA Voltage Source Inverter

Silicon carbide (SiC) MOSFET has the potential to replace silicon (Si) IGBT due to its superior switching performance. However due to presence of parasitic inductance in converter layout, device voltage and current experience overshoots and oscillations during device switching. These undesired overshoots increase switching loss. In the context of these parasitic inductances, the performance of ...

The Experience with SiC MOSFET and Buck Converter Snubber Design

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison wi...

Design and Control of a Novel hybrid Active Power Filter based on Load Harmonic Currents Separation with the aim of DC-link voltage minimization in voltage source converter

This paper proposes a new hybrid active power filter, including voltage source converter (VSC) based active power filter and Thyristor Controllable LC Passive Filter (TCLC-HAPF) for eliminating harmonic load current components and compensating reactive power. This new structure which is based on the separation of high and low-frequency components of load current idea can reduce the drawbacks of...

Ruggedness of 1200 V SiC MPS diodes

Quasi-Floating Gate MOSFET based Current-to-Voltage Converter

This paper demonstrates the use of quasi-floating gate MOSFET (QFGMOS) in the design of a current-to-voltage converter that operates for the input current range of 0 to 50?A. The workability of the circuit has been verified using SPICE simulations for 0. 18?m CMOS technology with the supply voltages of ±0. 5V. From the simulation results, it has been observed that the proposed circuit has low p...